S ymbol

Co n dition

R a tings

U nit

I T(AV) M

Unique phase uff0c demi onde uff0c péché 180° conduction ; T C =85° C

320

A

I TRMSM

Unique phase uff0c demi onde uff0c péché 180° conduction

520

A

I TS M

T j = T j MAX

8. 2

kA

I 2 t

T j = T j MAX

335

k A 2 S

V DRM / V RRM

T j = T j MAX

1600

V

di / dt

non - repetitive

1 00

A / us

V est o

A . C . 1 minute /1 S

3000/360 0

V

T j

- 40 ~ + 130

° C

T stg

- 40 ~ + 130

° C

W

A bout

410

g

S ymbol

Co n dition

R a tings

U nit

I DRM / I RRM

AtV DRM uff0c Unique phase uff0c demi onde uff0c T j = T j MAX

60

A

V T M

Sur - State Actuel 750 A uff0c T j =130° C

1. 47

V

V T ( À )

T j = T j MAX

0.77

V

T

T j = T j MAX

0.58

Ω

R K 1 G 1

-

Ω

R K 2 G 2

-

Ω

t gd

T j = 25° C ; V D =0.4 V DRM ; I TM = I TAV

2

u s

t q

dv D / dt =50 V / us ; T j = T j MAX ; I TM = I TAV

200

u s

I GT / V GT

T j =25° C uff0c I T =1 A uff0c V D =6V

150 / 2. 0

mA / V

V GD

V D = 67% V DRM

0.25

V

DV / DT

V D = 67% V DRM

1000

V / us

I H

T j =25° C

1 50

A

I L

T j =25° C

380

A

R th ( j - c )

Thermal résistance Junction to case ; per module

0.05 5

K / W

R th ( c - h )

Thermal résistance case to heatsink ; per module

0.0275

K / W